7Semi UCC21330 Dual-channel Isolated Gate Driver Breakout

The 7Semi UCC21330 Dual-Channel Isolated Gate Driver Breakout is a high-performance module designed for driving power MOSFETs, IGBTs, and SiC/GaN transistors in high-voltage and high-speed switching applications. Based on Texas Instruments’ UCC21330, it features two fully isolated gate drivers with reinforced isolation up to 5.7 kVRMS and robust protection features, including under-voltage lockout (UVLO) and fault diagnostics. The breakout provides superior switching performance, low propagation delay, and high common-mode transient immunity (CMTI), making it ideal for motor control, power conversion, and industrial automation systems.

Technical Specifications:

• IC Model: Texas Instruments UCC21330
  
• Driver Channels: 2 (dual independent isolated channels)
  
• Isolation Type: Reinforced isolation
  
• Isolation Voltage: 5.7 kVRMS (UL 1577 certified)
  
• Peak Output Current: 4A source / 6A sink per channel
  
• Operating Voltage (VDD): 4.5 V to 33 V
  
• Input Logic Voltage: 3.3 V or 5 V (TTL/CMOS compatible)
  
• Propagation Delay: 40 ns typical (matched between channels)
  
• Common Mode Transient Immunity (CMTI): >150 V/ns
  
• Under-Voltage Lockout (UVLO): Integrated for input and output stages
  
• Fault Protection: Over-current, UVLO, and fault reporting
  
• Operating Frequency: Up to 2 MHz
  
• Interface: PWM or digital control inputs (IN_A, IN_B)
  
• Output Type: Isolated gate drive outputs (OUT_A, OUT_B)
  
• Operating Temperature: -40°C to +125°C
  
• PCB Material: High-quality FR-4 with isolation routing
  
  

Features:

• Dual-channel reinforced isolated gate driver for high-voltage applications
  
• Supports both low-side and high-side driving configurations
  
• High peak output current for fast MOSFET and IGBT switching
  
• Reinforced isolation ensures safety in high-voltage circuits
  
• Excellent CMTI performance for noise immunity in fast-switching environments
  
• Integrated UVLO and fault detection for reliable operation
  
• Low propagation delay and matched timing for synchronized switching
  
• Compatible with both 3.3 V and 5 V logic input systems
  
• Compact breakout board with clear pin labeling for easy integration
  
• Ideal for driving SiC and GaN power devices in modern power electronics

Applications:

• Motor drives and industrial inverters
  
• DC-DC and AC-DC power converters
  
• High-voltage power supply systems
  
• Electric vehicle (EV) traction inverters and chargers
  
• Renewable energy systems (solar inverters, wind converters)
  
• UPS and energy storage systems
  
• Gate driving for MOSFETs, IGBTs, and SiC/GaN transistors
  
• Isolation and protection in high-speed switching circuits
  
• Research and prototyping of advanced power electronic systems