Description
1N5822 is a Schottky barrier rectifier diode mounted in an axial lead epoxy case using metal to silicon junction to yield forward voltage drop and instantaneous reverse recovery times.
Technical Specification:
- Forward Voltage-Max (VF): 0.7 V
- Non-rep Pk Forward Current-Max: 150.0 A
- Operating Temperature-Min: -55.0 Cel
- Operating Temperature-Max: 150.0 Cel
- Output Current-Max: 3.0 A
- Rep Pk Reverse Voltage-Max: 40.0 V
- Reverse Current-Max: 1500.0 µA
Features:
- Extremely Low Forward Voltage
- Low Stored Charge
- Majority Carrier Conduction
- Low Power Loss/High Efficiency
- These are Pb−Free Devices
Applications:
- Low voltage
- High frequency inverters
- Reverse polarity protection