The Schottky diode, also known as the Schottky barrier diode or hot-carrier diode, is a semiconductor diode formed by the junction of a semiconductor with a metal. It has a low forward voltage drop and a very fast switching action.
The IN5819 series employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features chrome barrier metal, epitaxial construction with oxide passivation, and metal overlap contact.
- Repetitive Reverse Voltage: 40V
- Working Peak Reverse Voltage: 40V
- DC Blocking Voltage: 40V
- RMS Reverse Voltage: 28V
- Non−Repetitive Peak Reverse Voltage: 48V
- Average Rectified Output Current: 1A
- Non-Repetitive Peak Forward Surge Current: 25A
- Operating Junction Temperature Range: −65 ~ +125°C
- Storage Temperature Range: −65 ~ +150°C
- Guard Ring Die Construction for Transient Protection
- Low Power Loss, High Efficiency
- High Surge Capability
- High Current Capability and Low Forward Voltage Drop
- Use in low voltage high frequency inverters, freewheeling, DC/DC converters, and polarity protection applications