1N5819 - 1A Schottky Barrier Diode

SKU: VC421

Price:
Sale price Rs. 20.34 (excl.18% GST)
Rs. 24.00

Description

The Schottky diode, also known as the Schottky barrier diode or hot-carrier diode, is a semiconductor diode formed by the junction of a semiconductor with a metal. It has a low forward voltage drop and a very fast switching action.

The IN5819 series employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features chrome barrier metal, epitaxial construction with oxide passivation, and metal overlap contact.

Technical Specification:

  • Repetitive Reverse Voltage: 40V
  • Working Peak Reverse Voltage: 40V
  • DC Blocking Voltage: 40V
  • RMS Reverse Voltage: 28V
  • Non−Repetitive Peak Reverse Voltage: 48V
  • Average Rectified Output Current: 1A
  • Non-Repetitive Peak Forward Surge Current: 25A
  • Operating Junction Temperature Range: −65 ~ +125°C
  • Storage Temperature Range: −65 ~ +150°C

Features:

  • Guard Ring Die Construction for Transient Protection
  • Low Power Loss, High Efficiency
  • High Surge Capability
  • High Current Capability and Low Forward Voltage Drop

 Applications:

  • Use in low voltage high frequency inverters, freewheeling, DC/DC converters, and polarity protection applications

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